ISL9N303AP3 / ISL9N303AS3ST / ISL9N303AS3
September 2002
PWM Optimized
ISL9N303AP3 / ISL9N303AS3ST / ISL9N303AS3
N-Channel Logic Level UltraFET® Trench
MOSFETs 30V, 75A, 3.
2mΩ
General Description
This device employs a new advanced trench
MOSFET technology and features low gate charge while maintaining low on-resistance.
Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.
Features
• Fast switching • rDS(ON) = 0.
0026Ω (Typ), VGS = 10V • rDS(ON) = 0.
004Ω (Typ), VGS = 4.
5V • Qg (Typ) = 61nC, VGS = 5V • Qgd (Typ) = 17nC • CISS (Typ) = 7000pF
Applications
• DC/DC converters
DRAIN (FLANGE)
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