Pb Free Product
http://www.
ncepower.
com
NCE55H12
NCE N-Channel Enhancement Mode Power
MOSFET
DESCRIPTION
The NCE55H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
GENERAL FEATURES
● VDS =55V,ID =120A RDS(ON) 5.
5mΩ @ VGS=10V (Typ:4.
1mΩ) ● High density cell design for ultra low Rdson ● Fully characterized Avalanche
voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Schematic diagram
Application
● ● ● Power switching application Hard Switched and High Frequency Circuits Uninterr...