June 1996
NDP6030L / NDB6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low
voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features
52 A, 30 V.
RDS(ON) = 0.
0135 Ω @ VGS=10 V RDS(ON) = 0.
020 Ω @ VGS=4.
5 V.
Critical DC electrical parameters specifie...