NDDP010N25AZ
Power
MOSFET 250V, 10A, 420mΩ, N-Channel
www.
onsemi.
com
Features
High Speed Switching
Low Gate Charge
ESD Diode-Protected Gate
100% Avalanche Tested
Pb-Free, Halogen Free and RoHS Compliance
Electrical Connection
2,4
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter
Symbol
Drain to Source
Voltage Gate to Source
Voltage Drain Current (DC) Drain Current (Pulse) PW10s, duty cycle1%
VDSS VGSS ID
IDP
Power Dissipation Tc=25C
PD
Junction Temperature
Tj
Storage Temperature
Tstg
Source Current (Body Diode) Avalanche Energy (Single Pulse) *1 Lead Temperature for Soldering Purposes, 3mm from Case for 10 Seconds
IS EAS
TL
Thermal Resistance...