February 1997
NDH833N N-Channel Enhancement Mode Field Effect Transistor
General Description
SuperSOT -8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
These devices are particularly suited for low
voltage applications such as battery powered circuits or portable electronics where fast switching, low in-line power loss, and resistance to transients are needed.
TM
Features
7.
1 A, 20 V.
RDS(ON) = 0.
020 Ω @ VGS = 4.
5 V RDS(ON) = 0.
025 Ω @ VGS = 2.
7 V.
Proprietary SuperSOTTM-8...