NDPL100N10B
Power
MOSFET 100V, 7.
2mΩ, 100A, N-Channel
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Features
• Low On-Resistance • Low Gate Charge • High Speed Switching • 100% Avalanche Tested • Pb-Free and RoHS Compliance
Specifications
Absolute Maximum Ratings at Ta = 25°C
VDSS 100V
RDS(on) Max 7.
2 mΩ@15V 8.
7 mΩ@10V
ID Max 100A
Electrical Connection
N-Channel
2
Parameter
Drain to Source
Voltage
Gate to Source
Voltage
Drain Current (DC) Drain Current (Pulse) PW≤10μs, duty cycle≤1% Power Dissipation Tc=25°C Junction Temperature
Storage Temperature
Source Current (Body Diode) Avalanche Energy (Single Pulse) *1 Lead Temperature for Soldering Purposes, 3mm from Case for 10 Seconds
Symbol VDSS VGSS ID
IDP
PD Tj Tstg ...