N
NDS9405 Single P-Channel Enhancement Mode Field Effect Transistor
February 1996
General Description
These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
This very high density process is been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes.
These devices are particularly suited for low
voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features
-4.
3A,...