July 1996
NDT451AN N-Channel Enhancement Mode Field Effect Transistor
General Description
Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
These devices are particularly suited for low
voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.
Features
7.
2A, 30V.
RDS(ON) = 0.
035Ω @ VGS = 10V RDS(ON) = 0.
05Ω @ VGS = 4.
5V.
High density cell design for extremely low RDS(ON).
...