September 1996
NDT452P P-Channel Enhancement Mode Field Effect Transistor
General Description
Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
These devices are particularly suited for low
voltage applications such as notebook computer power management and DC motor control.
Features
-3A, -30V.
RDS(ON) = 0.
18Ω @ VGS = -10V.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely used surface mount package.
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