December 1998
NDT456P P-Channel Enhancement Mode Field Effect Transistor
General Description
Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
These devices are particularly suited for low
voltage applications such as notebook computer power management, battery powered circuits, and DC motor control.
Features
-7.
5 A, -30 V.
RDS(ON) = 0.
030 Ω @ VGS = -10 V RDS(ON) = 0.
045 Ω @ VGS = -4.
5 V.
High density cell design for extremely low RDS(ON).
High power and current han...