Part Number
|
NE21935 |
Manufacturer
|
Advanced |
Description
|
NPN SILICON HI FREQUNCY TRANSISTOR |
Published
|
May 12, 2005 |
Detailed Description
|
NE21935
NPN SILICON HI FREQUNCY TRANSISTOR
DESCRIPTION:
The ASI NE21935 is Designed for general purpose and small sign...
|
Datasheet
|
NE21935
|
Overview
NE21935
NPN SILICON HI FREQUNCY TRANSISTOR
DESCRIPTION:
The ASI NE21935 is Designed for general purpose and small signal amplifier and oscillator applications up to 6.
0 GHz.
PACKAGE STYLE .
100 4L PILL
FEATURES INCLUDE:
• High frequency 8.
0 GH • Low noise, 1 dB at 0.
5 GHz.
MAXIMUM RATINGS:
IC VCBO VCEO VEBO PDISS TJ TSTG θJC 80 mA 20 V 10 V 1.
5 V 580 mW @ TA = 25 °C -65 °C to +200 °C -65 °C to +200 °C 80 °C/W
1 = BASE 3 = COLLECTOR 2& 4 = EMITTER
CHARACTERISTICS
SYMBOL
ICBO IEBO hFE CCB fT |S21E|
TC = 25 °C
TEST CONDITIONS
VCB = 8.
0 V VEB = 1.
0 V VCE = 8.
0 V VCB = 8.
0 V VCE = 8.
0 V VCE = 8.
0 V IC = 20 mA IC = 20 mA f = 1.
0 GHz f = 2.
0 GHz IC = 20 mA f = 1.
0 MHz
MINIMUM TYPICAL MAXIMU...
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