Part Number
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NE321000 |
Manufacturer
|
NEC |
Description
|
C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP |
Published
|
May 12, 2005 |
Detailed Description
|
DATA SHEET
HETERO JUNCTION FIELDEFFECT TRANSISTOR
NE321000
C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHI...
|
Datasheet
|
NE321000
|
Overview
DATA SHEET
HETERO JUNCTION FIELDEFFECT TRANSISTOR
NE321000
C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
DESCRIPTION
The NE321000 is Hetero Junction FET that utilizes the hetero junction to create high mobility electrons.
Its excellent low noise and associated gain make it suitable for DBS and another commercial systems, industrial and space applications.
FEATURES
• Super Low Noise Figure & High Associated Gain NF = 0.
35 dB TYP.
Ga = 13.
5 dB TYP.
@ f = 12 GHz • Gate Length: Lg ≤ 0.
20 µm • Gate Width : Wg = 160 µm
ORDERING INFORMATION (PLAN)
Part Number NE321000 Standard (Grade D) Quality Grade
Remark To order evaluation samples, please contact your local NEC sales office...
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