Part Number
|
NE3210S01 |
Manufacturer
|
CEL |
Description
|
HETERO JUNCTION FIELD EFFECT TRANSISTOR |
Published
|
Jun 28, 2019 |
Detailed Description
|
Drop-InDISReplacement:CONTICE3512K2NUED
DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3210S01
X to Ku BAND SUPER...
|
Datasheet
|
NE3210S01
|
Overview
Drop-InDISReplacement:CONTICE3512K2NUED
DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3210S01
X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET
DESCRIPTION The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons.
Its
excellent low noise and associated gain make it suitable for DBS and another commercial systems.
FEATURES • Super Low Noise Figure & High Associated Gain
NF = 0.
35 dB TYP.
Ga = 13.
5 dB TYP.
at f = 12 GHz • Gate Length: Lg ≤ 0.
20 µm • Gate Width : Wg = 160 µm
ORDERING INFORMATION (PLAN)
Part Number
Supplying Form
NE3210S01-T1
Tape & reel 1 000 pcs.
/reel
NE3210S01-T1B
Tape & reel 4 000 pcs.
/reel
Marking K
R...
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