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NE3508M04

Part Number NE3508M04
Manufacturer California Eastern Labs
Description HETERO JUNCTION FIELD EFFECT TRANSISITOR
Published Jun 2, 2006
Detailed Description com PRELIMINARY PRODUCT INFORMATION HETERO JUNCTION FIELD EFFECT TRANSISITOR NE3508M04 L to S BAND LOW...
Datasheet NE3508M04




Overview
com PRELIMINARY PRODUCT INFORMATION HETERO JUNCTION FIELD EFFECT TRANSISITOR NE3508M04 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES - Super Low Noise Figure & Associated Gain : NF=0.
45dB TYP.
Ga=14dB TYP.
@f=2GHz, VDS=2V, ID=10mA - Flat-lead 4-pin tin-type super mini-mold(M04) package (Pb-Free T.
) APPLICATIONS - Satellite Radio(SDARS, DMB, etc.
) antenna LNA - LNA for Micro-wave communication system ORDERING INFORMATION Part Number NE3508M04 NE3508M04-T2 Order Number NE3508M04-A NE3508M04-T2-A Quantity 50pcs (Non reel) 3 Kpcs/reel V79 Marking Supplying Form - 8 mm wide emboss taping - Pin1(Source), Pin2(Drain) face the perforation side of the tape Remark To o...






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