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NE3514S02

Part Number NE3514S02
Manufacturer CEL
Description K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Published May 15, 2007
Detailed Description HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3514S02 K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super l...
Datasheet NE3514S02




Overview
HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3514S02 K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.
75 dB TYP.
, Ga = 10 dB TYP.
@ f = 20 GHz • Micro-X plastic (S02) package APPLICATIONS • 20 GHz-band DBS LNB • Other K-band communication systems ORDERING INFORMATION Part Number NE3514S02-T1C NE3514S02-T1D Order Number NE3514S02-T1C-A NE3514S02-T1D-A Package S02 (Pb-Free) Quantity 2 kpcs/reel 10 kpcs/reel Marking D Supplying Form • 8 mm wide embossed taping • Pin 4 (Gate) faces the perforation side of the tape com Remark To order evaluation samples, contact your nearby sales office.
Part number for sample o...






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