DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE425S01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE425S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons.
Its excellent low noise and high associated gain make it suitable for DBS and another commercial systems.
PACKAGE DIMENSIONS (Unit: mm) 2.
0 ±0.
2 FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.
60 dB TYP.
, Ga = 12.
0 dB TYP.
at f = 12 GHz • Gate Length : Lg ≤ 0.
20 µm • Gate Width : Wg = 200 µm 2.
1 0 ±0 .
2 0.
5 TYP.
ORDERING INFORMATION PART NUMBER NE425S01-T1 NE425S01-T1B SUPPLYING FORM Tape & reel 1000 pcs.
/reel Tape & reel 4000 pcs.
/re...

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