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PRELIMINARY DATA SHEET
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION
FEATURES
• • • • • HIGH fT: 16 GHz TYP at 2 V, 20 mA LOW NOISE FIGURE: NF = 1.
1 dB TYP at 2 GHz HIGH GAIN: |S21E|2 = 14 dB TYP at f = 2 GHz 6 PIN SMALL MINI MOLD PACKAGE EXCELLENT LOW
VOLTAGE, LOW CURRENT PERFORMANCE
0.
65 2.
0 ± 0.
2 1.
3 2 1
NE699M01
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE M01
TOP VIEW
2.
1 ± 0.
1 1.
25 ± 0.
1
6 0.
2 (All Leads) 5
T97
3
4
DESCRIPTION
The NE699M01 is an NPN high frequency silicon epitaxial transistor (NE687) encapsulated in an ultra small 6 pin SOT363 package.
Its four emitter pins decrease emitter inductance resulting in 3 dB more gain...