DATA SHEET
GaAs MES FET
NE713
L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
FEATURES
x Low noise figure NF = 0.
6 dB TYP.
at f = 4 GHz x High associated gain Ga = 14 dB TYP.
at f = 4 GHz x Gate width: Wg = 280 Pm x Gate Length: Lg = 0.
3 Pm
ORDERING INFORMATION
PART NUMBER NE71300-N NE71300-M NE71300-L NE71383B I DSS (mA) 20 to 50 50 to 80 80 to 120 20 to 120 83B PACKAGE CODE 00 (CHIP)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source
Voltage Gate to Source
Voltage Gate to Drain
Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature VDS VGSO VGDO ID Ptot Tch Tstg 5.
0 ð5.
0 ð6.
0 IDSS 270 400 175 ð65 to +175 V V V mA mW mW °C °C [NE71383B] [NE7130...