Part Number
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NE8500100 |
Manufacturer
|
NEC |
Description
|
1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
Published
|
May 7, 2005 |
Detailed Description
|
PRELIMINARY DATA SHEET
GaAs MES FET
NE85001 SERIES
1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
DESCRIPTION
The N...
|
Datasheet
|
NE8500100
|
Overview
PRELIMINARY DATA SHEET
GaAs MES FET
NE85001 SERIES
1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
DESCRIPTION
The NE8500199 Power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on.
NE8500100 is the two-cells recessed gate chip used in ‘99’ package.
The device incorporates Ti-Al gate and silicon dioxide glassivation.
To reduce the thermal resistance, the device has a PHS.
(Plated Heat Sink) NEC’s strigent quality assurance and test procedures assure the highest reliability and performance.
FEATURES
• Class A operation • High power output • High reliability
PHYSICAL DIMENSIONS NE8500100 (CHIP) (unit: µm)
65 170
146
SELECTION CH...
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