NE850R599A

C-BAND MEDIUM POWER GaAs MESFET NE850R599A FEATURES • HIGH OUTPUT POWER: 0.5 W • HIGH LINEAR GAIN: 9.5 dB • HIGH EFFICIENCY (PAE): 38% • SUPERIOR INTERMODULATION DISTORTION • INDUSTRY STANDARD PACKAGING OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 99 5.2±0.3 1.0±0.1 4.0 MIN BOTH LEADS Gate φ2.2±0.2 4.0±0.1 Source 4.3±0.2 DESCRIPTION The NE850R599A is...