DATA SHEET SILICON POWER TRANSISTOR NEL200101-24 NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier DESCRIPTION AND APPLICATIONS NEL2001012-24 of NPN epitaxial microwave power transistors is designed for 1.
8-2 GHz PHS/PCN/PCS base station applications.
It incorporates emitter ballast resistors, gold metallizations and offers a high degree of reliability.
OUTLINE DIMENSIONS (Unit: mm) 1.
0 MIN.
1.
0 MIN.
0.
2 1.
2 –0.
1 +0.
2 1.
5 ±0.
2 3 FEATURES φ 7 ±0.
3 • High Linear Power and Gain • Low Internal Modulation Distortion • High Reliability Gold Metallization • 24 V Operation 1.
6 ±0.
3 2 2 ±0.
2 • Emitter Ballasting 0.
1 –0.
04 +0.
06 3.
0 6.
2 ±0.
2 1 1 - EMITTER 2 - BASE 3 - COLLECTOR ABS...

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