PRELIMINARY DATA SHEET
NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR
NESG2021M16
FEATURES
• HIGH BREAKDOWN
VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum)
• LOW NOISE FIGURE: NF = 0.
9 dB at 2 GHz NF = 1.
3 dB at 5.
2 GHz
• HIGH MAXIMUM STABLE GAIN: MSG = 22.
5 dB at 2 GHz
• LOW PROFILE M16 PACKAGE: 6-pin lead-less minimold
M16
DESCRIPTION
NEC's NESG2021M16 is fabricated using NEC s high
voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER PACKAGE OUTLINE
NESG2021M16 M16
DC RF
SYMBOLS NF
Ga
NF
Ga
MSG |S21E|2 P1dB
OIP3 fT Cre
...