F-28
01/99
NJ72L Process
Silicon Junction Field-Effect Transistor
¥ VHF/UHF Amplifier
Absolute maximum ratings at 25¡C free-air temperature.
Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C
G S-D S-D G
Die Size = 0.
020" X 0.
020" All Bond Pads = 0.
004" Sq.
Substrate is also Gate.
Devices in this Databook based on the NJ72L Process.
Datasheet
U310 U311 U350
www.
DataSheet4U.
com
At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown
Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff
Voltage Dynamic Electrical Characteristics Forward Transconductance Drain Source O...