DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP32N055HDE, NP32N055IDE, NP32N055SDE
SWITCHING N-CHANNEL POWER
MOSFET
DESCRIPTION
These products are N-channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES
• Channel temperature 175 degree rated • Super low on-state resistance
RDS(on)1 = 24 mΩ MAX.
(VGS = 10 V, ID = 16 A) RDS(on)2 = 29 mΩ MAX.
(VGS = 5.
0 V, ID = 16 A) • Low Ciss : Ciss = 1300 pF TYP.
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP32N055HDE NP32N055IDE Note
TO-251 (JEITA) / MP-3 TO-252 (JEITA) / MP-3Z
NP32N055SDE
Note Not for new design.
TO-252 (JEDEC) / MP-3ZK
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source
Voltage (VGS = 0 V)
VDSS...