DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP82N06PDG
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The NP82N06PDG is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER NP82N06PDG-E1-AY Note NP82N06PDG-E2-AY Note
LEAD PLATING Pure Sn (Tin)
Note See “TAPE INFORMATION”
PACKING Tape
800 p/reel
PACKAGE TO-263 (MP-25ZP)
typ.
1.
5 g
FEATURES
• Super low on-state resistance RDS(on)1 = 6.
7 mΩ MAX.
(VGS = 10 V, ID = 41 A) RDS(on)2 = 8.
5 mΩ MAX.
(VGS = 5 V, ID = 41 A)
• Low Ciss Ciss = 5700 pF TYP.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source
Voltage (VGS = 0 V)
VDSS
60
Gate to Source
Voltage (VDS = 0 V)
VGSS
±20
...