Part Number
|
NT5CB64M16DP |
Manufacturer
|
Nanya |
Description
|
1Gb DDR3 SDRAM |
Published
|
Jun 17, 2016 |
Detailed Description
|
1Gb DDR3 SDRAM
NT5CB128M8DN / NT5CB64M16DP NT5CC128M8DN / NT5CC64M16DP
Feature
1.5V ± 0.075V & 1.35V -0.067/+0.1V (JED...
|
Datasheet
|
NT5CB64M16DP
|
Overview
1Gb DDR3 SDRAM
NT5CB128M8DN / NT5CB64M16DP NT5CC128M8DN / NT5CC64M16DP
Feature
1.
5V ± 0.
075V & 1.
35V -0.
067/+0.
1V (JEDEC Standard Power Supply)
VDD= VDDQ= 1.
35V (1.
283~1.
45V ) Backward compatible to VDD= VDDQ= 1.
5V ±0.
075V Supports DDR3L devices to be backward compatible in 1.
5V applications
The timing specification of high speed bin is backward compatible with low speed bin
8 Internal memory banks (BA0- BA2) Differential clock input (CK, ) Programmable Latency: 5, 6, 7, 8, 9,
10, 11, 12, 13, (14) POSTED CAS ADDITIVE Programmable Additive
Latency: 0, CL-1, CL-2 Programmable Sequential / Interleave Burst Type Programmable Burst Length: 4, 8
8n-bit prefetch architect...
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