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NTD4810NH Power
MOSFET
30 V, 54 A, Single N−Channel, DPAK/IPAK
Features
• • • • •
Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb−Free Devices
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V(BR)DSS 30 V RDS(on) MAX 10 mW @ 10 V 16.
7 mW @ 4.
5 V D ID MAX 54 A
Applications
• CPU Power Delivery • DC−DC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Drain−to−Source
Voltage Gate−to−Source
Voltage Continuous Drain Current (RqJA) (Note 1) Power Dissipation (RqJA) (Note 1) Continuous Drain Current (RqJA) (Note 2) Power Dissipation (RqJA) (Note 2) Continuous Drain Current (...