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NTD4913N Power
MOSFET
Features
30 V, 32 A, Single N−Channel, DPAK/IPAK
• • • •
Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices
V(BR)DSS 30 V
http://onsemi.
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RDS(ON) MAX 10.
5 mW @ 10 V 15 mW @ 4.
5 V D ID MAX 32 A
Applications
• CPU Power Delivery • DC−DC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter Drain−to−Source
Voltage Gate−to−Source
Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain Current RqJC (Note 1) Power...