NTE251 (NPN) & NTE252 (PNP) Silicon Complementary Transistors
Darlington Power Amplifier
Description: The NTE251 (NPN) and NTE252 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications.
Features: D High DC Current Gain @ IC = 10A:
hFE = 2400 Typ (NTE251) hFE = 4000 Typ (NTE252) D Collector–Emitter Sustaining
Voltage: VCEO(sus) = 100V Min D Monolithic Construction with Built–In Base–Emitter Shunt Resistors
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Emitter
Voltage, VCEO .
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