NTE2708 Integrated Circuit NMOS, 8K UV EPROM, 450ns Description: The NTE2708 is an ultra–violet light–erasable, electrically programmable read only memory.
It has 8, 192 bits organized as 1024 words of 8–bit length.
This device is fabricated using N–channel silicon– gate technology for high speed and simple interface with MOS and bipolar circuits.
All inputs (including program data inputs) can be driven by Series 74 TTL circuits without the use of external pull–up resistors.
Each output can drive one Series 74 or 74LS TTL circuit without external resistors.
The data outputs for the NTE2708 are three–state for OR tying multiple devices on a common bus.
This EPROM is designed for high–density ...

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