NTE2925
MOSFET N−Ch, Enhancement Mode High Speed Switch TO−220 Full Pack Type Package
D
Features:
D Low Drain−Source ON Resistance: RDS(ON) = 1.
35 Typ.
D High Forward Transfer Admittance: |Yfs| = 5.
0S Typ.
D Low Leakage Current: IDSS = 100A Max.
(VDS = 640V) D Enhancement−Model: Vth = 2.
0V to 4.
0V (VDS = 10V, ID = 1mA)
G
S
Absolute Maximum Ratings: (TA = +25C, Note 1 unless otherwise specified)
Drain−Source
Voltage, VDSS .
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800V
Drain−Gate
Voltage (RGS = 20k), VDGR .
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800V
Gate−Source V...