NTE2939 MOSFET N−Ch, Enhancement Mode High Speed Switch TO−220 Full Pack Type Package D Features: D Low Drain−Source ON Resistance: RDS(ON) = 0.
33 Typ.
D High Forward Transfer Admittance: |Yfs| = 6.
5 S Typ.
D Low Leakage Current: IDSS = 10A Max.
(VDS = 600V) D Enhancement−Mode: Vth = 2.
0V to 4.
0V (VDS = 10V, ID = 1mA) G S Absolute Maximum Ratings: (TA = +25C, Note 1 unless otherwise specified) Drain−Source Voltage, VDSS .
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600V Gate−Source Voltage, VGSS .
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30 Drai...

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