NTE2969
MOSFET N–Channel, Enhancement Mode High Speed Switch
Features: D Avalanche Rugged Technology D Rugged Gate Oxide Technology D Low Input Capacitance D Improved Gate Charge D Extended Safe Operating Area D Lower Leakage Current D Low Static Drain–Source On–State Resistance Absolute Maximum Ratings: Drain–Source
Voltage, VDSS .
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400V Drain Current, ID Continuous TC = +25°C .
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25A TC = +100°C .
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