NTE3322 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch
Features: D High Input Impedance D High Speed D Low Saturation
Voltage D Enhancement Mode Applications: D High Power Switching Absolute Maximum Raings: (TA = +25°C unless otherwise specified) Collector–Emitter
Voltage, VCES .
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900V Gate–Emitter
Voltage, VGES .
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±25V Collector Current, IC DC .
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