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NTE359 Silicon NPN Transistor RF & Microwave Transistor
Description: RF Power Transistor 20W − 175 MHz Features: Specified 28 Volt, 175MHz Characteristics Output Power = 20 Watts Minimum Gain = 8.
2dB Efficiency = 60% Characterized from 125 to 175MHz Includes Series Equivalent Impedances Absolute Maximum Ratings: Collector−Emitter
Voltage, VCEO .
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35V Collector−Base
Voltage, VCB .
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65V Emitter−Base
Voltage, Veb .
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