NTGD4161P Power
MOSFET
−30 V, −2.
3 A, Dual P−Channel, TSOP−6
Features
• • • • •
Fast Switching Speed Low Gate Charge Low RDS(on) Independently Connected Devices to Provide Design Flexibility This is a Pb−Free Device
http://onsemi.
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V(BR)DSS −30 V
RDS(on) Max 160 mW @ −10 V 280 mW @ −4.
5 V
Applications
• Load Switch • Battery Protection • Portable Devices Like PDAs, Cellular Phones and Hard Drives
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Drain−to−Source
Voltage Gate−to−Source
Voltage Continuous Drain Current (Note 1) Steady State t≤5s Power Dissipation (Note 1) Steady State t≤5s Continuous Drain Current (Note 2) Power Dissipation (Note 2) Pulsed Drain Current Stea...