NTHD5903 Power
MOSFET
−20 V, −3.
0 A, Dual P−Channel ChipFETE
Features
• • • •
Low RDS(on) for Higher Efficiency Logic Level Gate Drive Miniature ChipFET Surface Mount Package Saves Board Space Pb−Free Package is Available
http://onsemi.
com
V(BR)DSS −20 V RDS(on) TYP 130 mW @ −4.
5 V 215 mW @ −2.
5 V S1 ID MAX −3.
0 A
Applications
• Power Management in Portable and Battery−Powered Products;
i.
e.
, Cellular and Cordless Telephones and PCMCIA Cards
G1
S2
G2
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating Drain−Source
Voltage Gate−Source
Voltage Continuous Drain Current (TJ = 150°C) (Note 1) TA = 25°C TA = 85°C Pulsed Drain Current Continuous Source Current (Diode Conduction) (Note...