isc N-Channel
MOSFET Transistor
NTHL040N65S3F
·FEATURES ·With TO-247 packaging ·Low RDS(on) 40mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Telecom / Server Power Supplies ·Industrial Power Supplies
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source
Voltage
650
VGSS
Gate-Source
Voltage
±30
ID
Drain Current-Continuous@Tc=25℃
65
IDM
Drain Current-Single Pulsed
162
PD
Total Dissipation
446
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal res...