com
NTLJD3119C Power
MOSFET
Features
20 V/−20 V, 4.
6 A/−4.
1 A, mCoolt Complementary, 2x2 mm, WDFN Package
• Complementary N−Channel and P−Channel
MOSFET • WDFN Package with Exposed Drain Pad for Excellent Thermal • • • • •
Conduction Footprint Same as SC−88 Package Leading Edge Trench Technology for Low On Resistance 1.
8 V Gate Threshold
Voltage Low Profile ( 0.
8 mm) for Easy Fit in Thin Environments This is a Pb−Free Device
V(BR)DSS N−Channel 20 V
http://onsemi.
com
RDS(on) MAX 65 mW @ 4.
5 V 75 mW @ 2.
5 V 120 mW @ 1.
8 V P−Channel −20 V 100 mW @ −4.
5 V 135 mW @ −2.
5 V 200 mW @ −1.
8 V ID MAX 3.
8 A 2.
0 A 1.
7 A −4.
1 A −2.
0 A −1.
6 A
Applications
• Synchronous DC−DC Conversio...