NTMD5838NL
MOSFET – Power, Dual, N-Channel, SO-8
40 V, 8.
9 A, 20 mW
Features
• Low RDS(on) • Low Capacitance • Optimized Gate Charge • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source
Voltage
Gate−to−Source
Voltage
Continuous Drain Current RqJA (Note 1)
Power Dissipation RqJA (Note 1)
Continuous Drain Current RqJA (Note 1)
Power Dissipation RqJA (Note 1)
Pulsed Drain Current
TA = 25°C
Steady State
TA = 70°C TA = 25°C
TA = 70°C
TA = 25°C
t ≤10 s
TA = 70°C TA = 25°C
TA = 70°C
tp = 10 ms
VDSS VGS ID
PD
ID
PD
IDM
40
V
±20
V
7.
4
A
5.
9
2.
1
W
1.
3
8.
9
A...