NTMFS6H800N
MOSFET – Power, Single, N-Channel
80 V, 2.
1 mW, 203 A
Features
• Small Footprint (5x6 mm) for Compact Design
• Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source
Voltage
Gate−to−Source
Voltage
Continuous Drain C(Nuortreesnt1R, 3qJ)C Power Dissipation RqJC (Note 1)
Steady State
TC = 25°C TC = 100°C TC = 25°C TC = 100°C
Continuous Drain C(Nuortreesnt1R, 2qJ,A3) Power Dissipation RqJA (Notes 1 & 2)
Steady State
TA = 25°C TA = 100°C TA = 25°C TA = 100°C
Pulsed Drain Current TA = 25°C,...