NTMS4917N Power
MOSFET
Features
30 V, 10.
5 A, N−Channel, SO−8
• • • • •
Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Optimized for 5 V, 12 V Gate Drives These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
http://onsemi.
com
V(BR)DSS 30 V RDS(ON) MAX 11 mW @ 10 V 15 mW @ 4.
5 V N−Channel ID MAX 10.
5 A
Applications
• DC−DC Converters • Printers
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter Drain−to−Source
Voltage Gate−to−Source
Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (...