NTR4501NT1G N-Channel
MOSFET
SOT-23
2.
9 +0.
1 -0.
1
0.
4 +0.
1 -0.
1
3
12
0.
95 +0.
1 -0.
1 1.
9 +0.
1 -0.
1
+0.
10.
97 -0.
1
+0.
11.
3 -0.
1
0.
55 0.
4
Unit: mm
0.
1 +0.
05 -0.
01
1.
Gate 2.
Source 3.
Drain
■ Features
● VDS (V) = 20V ● ID = 3.
2 A (VGS = 4.
5V) ● RDS(ON) < 70mΩ (VGS = 4.
5V) ● RDS(ON) < 85mΩ (VGS = 2.
5V) ● Leading Planar Technology for Low Gate Charge / Fast Switching ● 2.
5 V Rated for Low
Voltage Gate Drive
+0.
12.
4 -0.
1
0-0.
1 +0.
10.
38
-0.
1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source
Voltage
Gate-Source
Voltage
Continuous Drain Current (Note.
1)
TA=25℃ TA=85℃
Pulsed Drain Current @ tP=10us
Power Dissipation
(Note.
1)
Thermal Resistance.
Junction- to-Ambient (Note.
1)
...