MOSFET - Power, Single N-Channel, m8FL
100 V, 72 mW, 16 A
NTTFS080N10G
Features
• Wide SOA for Linear Mode Operation • Low RDS(on) to Minimize Conduction Losses • High Peak UIS Current Capability for Ruggedness • Small Footprint (3.
3 x 3.
3 mm) for Compact Design • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• 48 V Hot Swap System, Load Switch, Soft−Start, E−Fuse
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source
Voltage
VDSS
100
V
Gate−to−Source
Voltage
VGS
±20
V
Continuous Drain Current RqJC (Note 2)
Steady TC = 25°C
ID
State TC = 100°C
16
A
11
Power Dissipation RqJC (Note 2)
...