MOSFET - Power, Single N-Channel
80 V, 55 mW, 13 A
NTTFS6H888N
Features
• Small Footprint (3.
3 x 3.
3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source
Voltage
VDSS
80
V
Gate−to−Source
Voltage
VGS
±20
V
Continuous Drain
TC = 25°C
ID
Current RqJC (Notes 1, 2, 3, 4)
Steady TC = 100°C
Power Dissipation
State TC = 25°C
PD
RqJC (Notes 1, 2, 3)
TC = 100°C
12
A
8.
3
18
W
9.
2
Continuous Drain Current RqJA (Notes 1, 3, 4)
Power Dissipation RqJA (Notes 1, 3)
TA = 25°C
...