Silicon Carbide (SiC)
MOSFET – 40 mohm, 1200 V, M1, Bare Die
NVC040N120SC1
Description Silicon Carbide (SiC)
MOSFET uses a completely new technology
that provide superior switching performance and higher reliability compared to Silicon.
In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.
Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Features
• 1200 V @ TJ = 175°C • Typ RDS(on) = 40 mW at VGS = 20 V, ID = 40 A • High Speed Switching with Low Capacitance • 100% UIL Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS C...