MOSFET – Power, N-Channel
80 V, 1.
27 mW
NVCR4LS1D3N08M7A
Features
• Typical RDS(on) = 1.
0 mW at VGS = 10 V • Typical Qg(tot) = 172 nC at VGS = 10 V • AEC−Q101 Qualified and PPAP Capable • RoHS Compliant
DIMENSION (mm)
Die Size
Die Size (Sawn)
Source Attach Area
Gate Attach Area
Die Thickness
Gate and Source: AlSiCu Drain: Ti−NiV−Ag (back side of die) Passivation: Polyimide Wafer Diameter: 8 inch Wafer sawn on UV Tape Bad dice identified in inking Gross Die Counts: 1001
6604 x 3683 6584 ± 30 x 3663 ± 30 6399.
3 x 3452.
6 343.
1 x 477.
5 101.
6 ±19.
1
DATA SHEET www.
onsemi.
com
ORDERING INFORMATION
Device NVCR4LS1D3N08M7A
Package
Wafer Sawn on Foil
RECOMMENDED STORAGE CONDITIONS
Temperature R...