NVH4L060N065SC1

MOSFET - SiC Power, Single N-Channel, TO247-4L 650 V, 44 mW, 47 A NVH4L060N065SC1 Features • Typ. RDS(on) = 44 mW @ VGS = 18 V Typ. RDS(on) = 60 mW @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 74 nC) • Low Capacitance (Coss = 133 pF) • 100% Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Pb−Free and is RoHS Compliant Typical Appl...