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MOSFET - Power, Single N-Channel
80 V, 3.
2 mW, 135 A
V(BR)DSS 80 V
RDS(ON) MAX 3.
2 mW @ 10 V 4.
1 mW @ 4.
5 V
ID MAX 135 A
NVMFS6H818NL
Features
• Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS6H818NLWF − Wettable Flank Option for Enhanced Optical
Inspection
• AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant
D (5,6)
G (4) S (1,2,3)
N−CHANNEL
MOSFET
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source
Voltage
VDSS
80
V
Gate−to−Source
Voltage
VGS
±20
V
Continuous Drain Curren...