NX1029X
60 / 50 V, 330 / 170 mA N/P-channel Trench
MOSFET
28 December 2022
Product data sheet
1.
General description
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2.
Features and benefits
• Logic-level compatible • Very fast switching • Trench
MOSFET technology • ESD protection up to 2 kV (N-channel) and 1 kV (P-channel)
3.
Applications
• Level shifter • Power supply converter • Loadswitch • Switching circuits
4.
Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
TR1 (N-channel)
VDS
drain-source
voltage Tj = 2...